TaWN film in copper interlinked barrier layer material

A TaWN film used as the barrier material of copper interconnection contains W (13.6-22.7 Wt%), N (9) and Ta (rest). Its advantages are high adhesion and high power to resist against electronic migration.

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Bibliographic Details
Main Authors CHEN SHOUMIAN, MAO DALI, LI MING, YANG CHUNSHENG, LING HUIQIN
Format Patent
LanguageChinese
English
Published 16.04.2008
Subjects
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Summary:A TaWN film used as the barrier material of copper interconnection contains W (13.6-22.7 Wt%), N (9) and Ta (rest). Its advantages are high adhesion and high power to resist against electronic migration.
Bibliography:Application Number: CN200510030978