Method and apparatus for testing tunnel magnetoresistive effect element

Testing a TMR element includes a step of measuring initially a resistance value of the TMR element to provide the measured resistance value as a first resistance value, a step of measuring a resistance value of the TMR element after continuously feeding a current through the TMR element from a anti-...

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Bibliographic Details
Main Authors HACHISUKA NOZOMU, SARUKI SHUNJI, KIYONO HIROSHI, INAGE KENJI
Format Patent
LanguageChinese
English
Published 06.02.2008
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER
MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
TESTING
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Summary:Testing a TMR element includes a step of measuring initially a resistance value of the TMR element to provide the measured resistance value as a first resistance value, a step of measuring a resistance value of the TMR element after continuously feeding a current through the TMR element from a anti-substrate side to a substrate side for a predetermined period of time, to provide the measured resistance value as a second resistance value, and a step of evaluating the TMR element by comparing the first resistance value and the second resistance value with each other.
Bibliography:Application Number: CN200510067701