Based, triple-well fully depleted SOI structure, and various methods of making and operating same

• Main Author: WEI ANDY C.,WRISTERS DERICK J.,FUSELIER MARK B
• Format: Patent
• Language: English
• Published: 31.10.2007
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

In one example, a method of forming a transistor above a silicon-on-insulator substrate comprised of a bulk substrate, a buried oxide layer and an active layer, the bulk substrate being doped with a first type of dopant material is disclosed. The method comprises performing a first ion implant process using a dopant material that is of a type opposite the first type of dopant material to form a first well region within the bulk substrate, performing a second ion implant process using a dopant material that is the same type as the first type of dopant material to form a second well region in the bulk substrate within the first well, the transistor being formed in the active layer above the second well, forming a conductive contact to the first well and forming a conductive contact to the second well.