Opposite target reaction magnetocontrol sputtering method for preparing vanadium oxide film

A process for preparing the vanadium oxide film by magnetically controlled sputtering with the reaction between two opposite targets includes such steps as washing Si (or glass) substrate, depositing a silicon oxide film layer on the Si substrate by PECVD method, and magnetically controlled sputteri...

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Bibliographic Details
Main Author MING,WU HU
Format Patent
LanguageEnglish
Published 03.10.2007
Subjects
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Summary:A process for preparing the vanadium oxide film by magnetically controlled sputtering with the reaction between two opposite targets includes such steps as washing Si (or glass) substrate, depositing a silicon oxide film layer on the Si substrate by PECVD method, and magnetically controlled sputtering with two opposite targets to deposit vanadium oxide film. The technological condition for said sputtering is also disclosed. Said film features high electric resistance-temp coefficient and low electric resistance at ordinary temp.
Bibliography:Application Number: CN200510014470