CH670334

In a power semiconductor component having a so-called "recessed-gate" structure on the cathode side, the large-area control structure consisting of cathode fingers (1) and a lower-lying gate level (2) is divided into a plurality of small-area control zones (25a, 25b) which in each case by...

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Bibliographic Details
Main Authors GRUENING, HORST, BROICH, BRUNO
Format Patent
LanguageGerman
Published 31.05.1989
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:In a power semiconductor component having a so-called "recessed-gate" structure on the cathode side, the large-area control structure consisting of cathode fingers (1) and a lower-lying gate level (2) is divided into a plurality of small-area control zones (25a, 25b) which in each case by themselves are soldered to a cathode block (13a, 13b). This creates high-power components without the pssibility of excessive thermal stresses occurring during load cycles.
Bibliography:Application Number: CH19860003707