CONTENT ADDRESSED MEMORY SYSTEM

1,055,630. Superconductive circuits. GENERAL ELECTRIC CO. March 23, 1964 [April 11, 1963], No. 12220/64. Heading H3B. [Also in Division G4] The cryotron matrix storage cell disclosed in Specification 1,053,770 is modified by the provision of a by-pass circuit including a cryotron 25, this by-pass ci...

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Bibliographic Details
Main Authors DWIGHT W. DOSS, BRUCE T. MCKEEVER, JOHN W. BREMER
Format Patent
LanguageEnglish
Published 30.04.1968
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:1,055,630. Superconductive circuits. GENERAL ELECTRIC CO. March 23, 1964 [April 11, 1963], No. 12220/64. Heading H3B. [Also in Division G4] The cryotron matrix storage cell disclosed in Specification 1,053,770 is modified by the provision of a by-pass circuit including a cryotron 25, this by-pass circuit being normally enabled, but being disabled to render the cell effective for writing by applying a digit current I to line 33 thus rendering cryotron 25 resistive. Information can therefore be written into selected cells of a selected row of the matrix without disturbing the state of the remaining cells of the row. The memory is employed in associative searches, comparison and recoding operations (see Division G4).
Bibliography:Application Number: CAD784373