SEMICONDUCTOR SWITCHING DEVICE

A semiconductor device cell includes a drift region having a first conductivity type, a well region having a second conductivity type disposed adjacent to the drift region, the well region defining a set of well region segments. A source region having the first conductivity type is disposed adjacent...

Full description

Saved in:
Bibliographic Details
Main Authors KENNERLY, STACEY J, HITCHCOCK, COLLIN WILLIAM, STEVANOVIC, LJUBISA D
Format Patent
LanguageEnglish
French
Published 11.09.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A semiconductor device cell includes a drift region having a first conductivity type, a well region having a second conductivity type disposed adjacent to the drift region, the well region defining a set of well region segments. A source region having the first conductivity type is disposed adjacent to the well region and surrounded by the well region. A channel region having the second conductivity type, and defining a set of channel region segments, a periphery of the channel region segment being surrounded by the well region. The well region, source region, and channel region cooperatively define a first axial length extending across the surface.
Bibliography:Application Number: CA20233191581