DEPOSITION METHODOLOGY FOR SUPERCONDUCTOR INTERCONNECTS
A method of forming a superconductor interconnect structure is disclosed. The method includes forming a dielectric layer overlying a substrate, forming an interconnect opening in the dielectric layer, and moving the substrate to a deposition chamber. The method further includes depositing a supercon...
Saved in:
Main Authors | , , , |
---|---|
Format | Patent |
Language | English French |
Published |
21.02.2019
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | A method of forming a superconductor interconnect structure is disclosed. The method includes forming a dielectric layer overlying a substrate, forming an interconnect opening in the dielectric layer, and moving the substrate to a deposition chamber. The method further includes depositing a superconducting metal in the interconnect opening, by performing a series of superconducting deposition and cooling processes to maintain a chamber temperature at or below a predetermined temperature until the superconducting metal has a desired thickness, to form a superconducting element in the superconductor interconnect structure. |
---|---|
Bibliography: | Application Number: CA20183060218 |