DEPOSITION METHODOLOGY FOR SUPERCONDUCTOR INTERCONNECTS

A method of forming a superconductor interconnect structure is disclosed. The method includes forming a dielectric layer overlying a substrate, forming an interconnect opening in the dielectric layer, and moving the substrate to a deposition chamber. The method further includes depositing a supercon...

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Bibliographic Details
Main Authors RENNIE, MICHAEL, LUU, VIVIEN M, KIRBY, CHRISTOPHER F, MCLAUGHLIN, SEAN R
Format Patent
LanguageEnglish
French
Published 21.02.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of forming a superconductor interconnect structure is disclosed. The method includes forming a dielectric layer overlying a substrate, forming an interconnect opening in the dielectric layer, and moving the substrate to a deposition chamber. The method further includes depositing a superconducting metal in the interconnect opening, by performing a series of superconducting deposition and cooling processes to maintain a chamber temperature at or below a predetermined temperature until the superconducting metal has a desired thickness, to form a superconducting element in the superconductor interconnect structure.
Bibliography:Application Number: CA20183060218