METHOD FOR MODIFYING AN INITIAL STRESS STATE OF AN ACTIVE LAYER TO A FINAL STRESS STATE

• Main Authors: LE VAILLANT, YVES-MATTHIEU, NAVARRO, ETIENNE
• Format: Patent
• Language: English; French
• Published: 02.01.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

This method comprises the steps of a) providing a first substrate (1) comprising the active layer (10) made from a first material with Young's modulus E1, and thickness h1; b) providing a second substrate (2) made from a second material with Young's modulus E2, and thickness h2, c) bending...