HIGH STRENGTH SPUTTERING TARGET FOR FORMING PHOSPHOR FILM INELECTROLUMINESCENCE ELEMENT
Provided is a sputtering target for forming a phosphor film in an electroluminescence element, which can maintain high strength even when it is allowed to stand in the atmosphere for a long time. The target has a chemical composition of Al: 20 to 50 mass %, Eu: 1 to 10 mass %, and the remainder cont...
Saved in:
Main Authors | , , |
---|---|
Format | Patent |
Language | English French |
Published |
16.11.2006
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | Provided is a sputtering target for forming a phosphor film in an electroluminescence element, which can maintain high strength even when it is allowed to stand in the atmosphere for a long time. The target has a chemical composition of Al: 20 to 50 mass %, Eu: 1 to 10 mass %, and the remainder containing Ba and inevitable impurities, and has a structure wherein Ba in which Eu is solid-solubilized and Al form an intermetallic compound phase, wherein the intermetallic compound phase of Ba in which Eu is solid-solubilized and Al includes a BaAl4 intermetallic compound phase and a Ba7Al13 intermetallic compound phase, and Eu forms a solid solution with Ba in the BaAl4 intermetallic compound and in the Ba7Al13 intermetallic compound, respectively. |
---|---|
Bibliography: | Application Number: CA20062607620 |