IMPROVED DEPOSITION RATE PLASMA ENHANCED CHEMICAL VAPOR PROCESS

• Main Authors: GABELNICK, AARON M, LAMBERT, CHRISTINA A
• Format: Patent
• Language: English; French
• Published: 11.05.2006
• Subjects: AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G; APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOSITIONS BASED THEREON; DIFFUSION TREATMENT OF METALLIC MATERIAL; GENERAL PROCESSES OF COMPOUNDING; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; ORGANIC MACROMOLECULAR COMPOUNDS; PERFORMING OPERATIONS; PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL; SPRAYING OR ATOMISING IN GENERAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; THEIR PREPARATION OR CHEMICAL WORKING-UP; TRANSPORTING; WORKING-UP

A process for depositing a layer of a plasma polymerized organosiloxane, siloxane or silicon oxide onto the surface of an organic polymeric substrate by atmospheric pressure glow discharge deposition from a gaseous mixture comprising a silicon containing compound and an oxidant, characterized in that the oxidant comprises N2O.