DIRECT LASER WRITING METHOD FOR FABRICATING THREE-DIMENSIONAL PHOTONIC CRYSTALS WITH INORGANIC MATERIAL SUBSTRATES

The invention relates to a method for producing photonic crystals during which an inorganic photoresist is firstly provided that exhibits a phase change when irradiated with an energy greater than the electronic band gap of the photoresist. By irradiating the photoresist with a laser beam whose ener...

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Bibliographic Details
Main Authors WONG, SEAN HANG EDMOUND, WEGENER, MARTIN, OZIN, GEOFFREY A, VON FREYMANN, GEORG LUDWIG EBERHARD, DEUBEL, MARKUS
Format Patent
LanguageEnglish
French
Published 15.10.2013
Subjects
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
OPTICS
PHYSICS
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Summary:The invention relates to a method for producing photonic crystals during which an inorganic photoresist is firstly provided that exhibits a phase change when irradiated with an energy greater than the electronic band gap of the photoresist. By irradiating the photoresist with a laser beam whose energy is less than the electronic band gap of the photoresist, whose intensity at the focal point, however, is high enough that non-linear effects occur there, a phase change nevertheless occurs in the photoresist. Afterwards, the irradiated photoresist is subjected to the action of an etching solution that preferably dissolves a phase of the photoresist and lastly, the developed photoresist is removed therefrom in the form of a photonic crystal. Inorganic photonic crystals produced according to the inventive method are suited for use in fully optical systems, circuits and components for optical telecommunications or computer systems.
Bibliography:Application Number: CA20052573930