SEMICONDUCTOR PRESSURE SENSOR AND METHOD OF MANUFACTURING THE SAME

A portion corresponding to a pressure sensitive region of an n-type monocrystalline Si layer (1) is etched to an SiO2 layer (2) by using the SiO2 layer (2) as the etching stopper layer. The exposed SiO2 layer (2) is removed by etching. A predetermined amount of pressure sensitive region of an n-type...

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Bibliographic Details
Main Authors YONEDA, MASAYUKI, TOUJOU, HIROFUMI, GOSHOO, YASUHIRO, FUKIURA, TAKESHI
Format Patent
LanguageEnglish
French
Published 24.08.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MEASURING
MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
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Summary:A portion corresponding to a pressure sensitive region of an n-type monocrystalline Si layer (1) is etched to an SiO2 layer (2) by using the SiO2 layer (2) as the etching stopper layer. The exposed SiO2 layer (2) is removed by etching. A predetermined amount of pressure sensitive region of an n-type monocrystalline Si layer (3) is etched to form a diaphragm (4). In such a way the SiO2 layer (2) is removed from the diaphragm (4) and a diaphragm edge portion (6).
Bibliography:Application Number: CA19992319570