GALLIUM OXIDE THIN FILMS

• Main Authors: SCHUBERT, ERDMANN F, PASSLACK, MATTHIAS, ZYDZIK, GEORGE J, HUNT, NEIL E.J
• Format: Patent
• Language: English; French
• Published: 04.08.1998
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DEVICES USING STIMULATED EMISSION; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

Disclosed is a method of fabricating a stoichiometric gallium oxide (Ga2O3) thin film with dielectric properties on at least a portion of a semiconducting, insulating or metallic substrate. The method comprises electronbeam evaporation of single crystal, high purity Gd3 GasO12 complex compound combining relatively ionic oxide, such as Gd2O3, with the more covalent oxide Ga2O3 such as to deposit a uniform, homogeneous, dense Ga2O3 thin film with dielectric properties on a variety of said substrates, the semiconducting substr ates including III-V and II-VI compound semiconductors.