HIGH PERFORMANCE SIDEWALL EMITTER TRANSISTOR

A novel vertical bi-polar device endowed with a lithography-independent tightly controlled sub-micron-wide emitter and a process of forming such a device. In one embodiment, the emitter is contacted by a self-aligned conductive sidewall linked up to a horizontal conductive link. The extrinsic base,...

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Bibliographic Details
Main Authors SHEPARD, JOSEPH F, MONKOWSKI, MICHAEL D
Format Patent
LanguageEnglish
French
Published 11.12.1990
Edition5
Subjects
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