HIGH PERFORMANCE SIDEWALL EMITTER TRANSISTOR

A novel vertical bi-polar device endowed with a lithography-independent tightly controlled sub-micron-wide emitter and a process of forming such a device. In one embodiment, the emitter is contacted by a self-aligned conductive sidewall linked up to a horizontal conductive link. The extrinsic base,...

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Bibliographic Details
Main Authors SHEPARD, JOSEPH F, MONKOWSKI, MICHAEL D
Format Patent
LanguageEnglish
French
Published 11.12.1990
Edition5
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A novel vertical bi-polar device endowed with a lithography-independent tightly controlled sub-micron-wide emitter and a process of forming such a device. In one embodiment, the emitter is contacted by a self-aligned conductive sidewall linked up to a horizontal conductive link. The extrinsic base, embedded within the collector, is recessed below and laterally spaced from the emitter by an insulator layer formed on the emitter sidewall. Transistor action is confined to the small emitter within the intrinsic base, the latter being continuous with the extrinsic base. The base is contacted by means of a conductive self-aligned silicide formed on the extrinsic base. In a second embodiment, the emitter is of a desired shape with a correspondingly shaped contacting sidewall and pad integral structure. In a third embodiment, the emitter is ring shaped. In all embodiments, electrical contact to emitter is established at a distance laterally away from the transistor action area.
Bibliography:Application Number: CA19880564542