SEMICONDUCTOR DEVICE FOR GENERATING AN ELECTRON BEAM

PHN11.670 21 16.6.1986 Semiconductor device for generating an electron beam. By providing in a reverse biased junction cathode an intrinsic semiconductor region (5) between the n-type surface region (3) and the p-type zone (4), a maximum field is present over the intrinsic region (5) in the operatin...

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Bibliographic Details
Main Authors VAN GORKOM, GERARDUS G.P, HOEBERECHTS, ARTHUR M.E
Format Patent
LanguageEnglish
French
Published 31.10.1989
Edition4
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PHN11.670 21 16.6.1986 Semiconductor device for generating an electron beam. By providing in a reverse biased junction cathode an intrinsic semiconductor region (5) between the n-type surface region (3) and the p-type zone (4), a maximum field is present over the intrinsic region (5) in the operating condition. The efficiency of the cathode is increased because avalanche multiplication can now occur over a greater distance, whilst in addition electrons to be emitted at a sufficient energy are generated by means of tunnelling.
Bibliography:Application Number: CA19870531879