SEMICONDUCTOR DEVICE FOR GENERATING AN ELECTRON BEAM
9 Semiconductor device for generating an electron current. A semiconductor cathode is realized with the aid of a pin structure in which the intrinsic semiconductor region (5, 6) comprises a first region (6) with a small. band distance and a second region (5) with a large band distance. Consequently,...
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Main Authors | , |
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Format | Patent |
Language | English French |
Published |
25.04.1989
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Edition | 4 |
Subjects | |
Online Access | Get full text |
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Summary: | 9 Semiconductor device for generating an electron current. A semiconductor cathode is realized with the aid of a pin structure in which the intrinsic semiconductor region (5, 6) comprises a first region (6) with a small. band distance and a second region (5) with a large band distance. Consequently, at a sufficient reverse voltage electrons (13) are generated in the first region (6) which electrons tunnel from the valence band to the conduction band and have a sufficient potential energy to be emitted from the semiconductor body (1). |
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Bibliography: | Application Number: CA19870531875 |