FABRICATION OF GROOVED SEMICONDUCTOR DEVICES

THE FABRICATION OF GROOVED SEMICONDUCTOR DEVICES V-grooves are etched in Group III-V compound semiconductors using a composite mask comprising a thin native oxide layer on the semiconductor and a dielectric etch mask on the native oxide. Described in detail is the application of this technique to et...

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Bibliographic Details
Main Authors DAUTREMONT-SMITH, WILLIAM C, WILT, DANIEL P
Format Patent
LanguageEnglish
French
Published 11.08.1987
Edition4
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:THE FABRICATION OF GROOVED SEMICONDUCTOR DEVICES V-grooves are etched in Group III-V compound semiconductors using a composite mask comprising a thin native oxide layer on the semiconductor and a dielectric etch mask on the native oxide. Described in detail is the application of this technique to etching V-grooves in InP for the fabrication of CSBH InP/InGaAsP lasers.
Bibliography:Application Number: CA19850484082