SEMICONDUCTOR DEVICE COMPRISING A LAYER OF TUNGSTEN BETWEEN CONDUCTIVE TRACKS

16 The semiconductor device comprises a semiconductor body having a surface which is covered by a first insulating layer on which a first conductive track is disposed, which is covered by a second insulating layer, which extends also over the first insulating layer and on which a second conductive t...

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Bibliographic Details
Main Author BROADBENT, ELIOT K
Format Patent
LanguageEnglish
French
Published 16.12.1986
Edition4
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:16 The semiconductor device comprises a semiconductor body having a surface which is covered by a first insulating layer on which a first conductive track is disposed, which is covered by a second insulating layer, which extends also over the first insulating layer and on which a second conductive track is disposed, the second insulating layer being provided with a window, through which the second conductive track contacts the first conductive track. A layer of tungsten is present under the second conductive track. According to the invention, the tungsten is present only at the area of the first conductive track within the window in the second insulating layer. During operation of the device, substantially no shortcircuits occur between initially mutually insulated conductive tracks.
Bibliography:Application Number: CA19840453393