BALLISTIC TRANSPORT-TYPE SEMICONDUCTOR DEVICE FOR DETECTING ELECTRONS AND PRODUCTION PROCESS FOR SUCH A DEVICE

BALLISTIC TRANSPORT-TYPE SEMICONDUCTOR DEVICE FOR DETECTING ELECTRONS AND PRODUCTION PROCESS FOR SUCH A DEVICE A semiconductor device having a structure originating from field effect transistors of a vertical configuration type in which, by novel means, a deflection is brought about between the elec...

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Bibliographic Details
Main Author JAY, PAUL R
Format Patent
LanguageEnglish
French
Published 06.11.1984
Edition3
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:BALLISTIC TRANSPORT-TYPE SEMICONDUCTOR DEVICE FOR DETECTING ELECTRONS AND PRODUCTION PROCESS FOR SUCH A DEVICE A semiconductor device having a structure originating from field effect transistors of a vertical configuration type in which, by novel means, a deflection is brought about between the electrons so as to be able to switch in an ultra-rapid manner a current or signal or produce a phase shift. To this effect, in a very thin monocrystalline gallium arsenide film, a certain number of cells is produced for this purpose and each of them comprising a cathode, a first grid electrode embedded in the semiconductor material, a second grid electrode and at least one anode electrode serving as a target for the ballistic electrons, whose beam is deflected as a function of the different polarizations applied to the grid electrodes.
Bibliography:Application Number: CA19820394852