METHOD OF GROWING SINGLE CRYSTALS

Single crystals of alpha aluminum phosphate of high crystal perfection are grown from seeded solutions of aluminum orthophosphate and orthophosphoric acid in such a manner as to provide direct visual observation of the crystal growth process and allow precise determination of nucleation and growth k...

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Bibliographic Details
Main Authors AUCOIN, THOMAS R, MALIK, ROGER J, WADE, MELVIN J, SCHWARTZ, ABRAHAM
Format Patent
LanguageEnglish
French
Published 05.07.1983
Edition3
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Summary:Single crystals of alpha aluminum phosphate of high crystal perfection are grown from seeded solutions of aluminum orthophosphate and orthophosphoric acid in such a manner as to provide direct visual observation of the crystal growth process and allow precise determination of nucleation and growth kinetics. The method involves sealing the seeded solution in clear quartz ampules, inserting the ampules into a precisely temperature controlled silicone oil bath, increasing the temperature of the silicone oil bath from ambient temperature to approximately 150 degrees C over a three hour period, programming the temperature of the bath upward at the rate of 0.1 to 2.0 degrees C per day for periods up to sixty days, and removing the quartz ampules from the silicone oil bath and quickly cooling and removing the crystals.
Bibliography:Application Number: CA19800353628