COLD CATHODE SEMICONDUCTOR DEVICE

1 PHN 9025 The invention relates to a semiconductor cathode based on avalanche breakdown in the p-n junction. The released electrons obtain extra energy by means of an accelerating electrode provided on the device. The achieved efficiency increase makes the manufacture of such cathodes in planar sil...

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Bibliographic Details
Main Authors VAN GORKOM, GERARDUS G.P, HOEBERECHTS, ARTHUR M.E
Format Patent
LanguageEnglish
French
Published 14.09.1982
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:1 PHN 9025 The invention relates to a semiconductor cathode based on avalanche breakdown in the p-n junction. The released electrons obtain extra energy by means of an accelerating electrode provided on the device. The achieved efficiency increase makes the manufacture of such cathodes in planar silicon technology sensible. Said cathodes are applied, for example, in cathode ray tube, flat displays, pick-up tubes and electron lithography.
Bibliography:Application Number: CA19790319908