SEMICONDUCTOR DEVICE HAVING A HETERO JUNCTION

A semiconductor device comprising a silicon substrate with an oxygen doped polycrystalline or amorphous silicon layer formed on the substrate so as to form a hetero junction therewith. A transistor formed according to the invention has an emitter-base hetero junction and has a high current gain.

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Bibliographic Details
Main Authors SHIBASAKI, MITSURU, HAYASHI, HISAO, MATSUSHITA, TAKESHI
Format Patent
LanguageEnglish
French
Published 08.04.1980
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device comprising a silicon substrate with an oxygen doped polycrystalline or amorphous silicon layer formed on the substrate so as to form a hetero junction therewith. A transistor formed according to the invention has an emitter-base hetero junction and has a high current gain.
Bibliography:Application Number: CA19760251094