PROCESS FOR THE PRODUCTION OF III A - V B COMPOUNDS

• Main Authors: ZEUCH, KLAUS, RAAB, GUNTER
• Format: Patent
• Language: English; French
• Published: 05.12.1978
• Subjects: ADHESIVES; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; ALLOYS; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; COMPOUNDS THEREOF; CRYSTAL GROWTH; DYES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FERROUS OR NON-FERROUS ALLOYS; INORGANIC CHEMISTRY; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; NATURAL RESINS; NON-METALLIC ELEMENTS; PAINTS; POLISHES; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; TREATMENT OF ALLOYS OR NON-FERROUS METALS; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

ABSTRACT OF THE DISCLOSURE An improved process for the production of compact polycrystal-line AIII - BV compounds such as GaP which are useful semiconductors through direct synthesis from the components in a closed horizontal system, in which at least one of the components has a substantially higher partial vapor pressure over the molten compound being produced than do the other components. In carrying out the process, the components which are more difficult to vaporize are heated in a narrow reaction zone to a temperature in the range of 100 to 500°C below the congruent melting temperature of the compound being produced while the pressure of the easily vaporized components is adjusted so that it amounts to between 0.14 and 0.33 times the decomposition vapor pressure of the compound being produced and thus to 50 to 120 times the decom-position vapor pressure of the solution of the compound being produced in the components which are difficult to vaporize at the reaction temperature.