PROCESSO DE GRAVACAO A SECO

In a dry etching process for patterning a substrate (2), an etching mask (4) consisting of a chemically deposited oxide, for example Al2O3, is used and the etching is carried out in a fluorine-containing plasma. By this means, etching selectivities of more than 100 are achieved for a substrate (2) o...

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Bibliographic Details
Main Authors JENS GOBRECHT, MARCO ROSSINELLI
Format Patent
LanguagePortuguese
Published 31.12.1985
Edition4
Subjects
BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE
SEMICONDUCTOR DEVICES
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Summary:In a dry etching process for patterning a substrate (2), an etching mask (4) consisting of a chemically deposited oxide, for example Al2O3, is used and the etching is carried out in a fluorine-containing plasma. By this means, etching selectivities of more than 100 are achieved for a substrate (2) of silicon.
Bibliography:Application Number: BR19858502114