PREPARATION DE SILICIUM PAR DEGRADATION DE POLYMERES

What is disclosed is a method of forming silicon from the degradation of polychlorosilanes, a method of coating a substrate with said silicon and a product of said coating method. The method of forming silicon consists essentially of pyrolyzing said polychlorosilanes in an inert atmosphere or in a v...

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Bibliographic Details
Main Authors GAUL J H, WEYENBERG D R
Format Patent
LanguageFrench
Published 06.01.1982
Subjects
BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
COMPOUNDS THEREOF
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
SEMICONDUCTOR DEVICES
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Summary:What is disclosed is a method of forming silicon from the degradation of polychlorosilanes, a method of coating a substrate with said silicon and a product of said coating method. The method of forming silicon consists essentially of pyrolyzing said polychlorosilanes in an inert atmosphere or in a vacuum at a temperature of 500 DEG C. to 1450 DEG C.
Bibliography:Application Number: BE19810205326