DISPOSITIF ELECTROLUMINESCENT ET PROCEDE POUR SA FABRICATION

A beam-leaded electroluminescent diode structure and a method of manufacture are described. The p-n junction is formed such that the junction extends to the top surface of the semiconductor crystal. Proton bombardment of the surface forms insulating regions within the crystal which passivate the p-n...

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Bibliographic Details
Main Authors S.M. SPITZER, M. KUHN, L.A. D'ASARO
Format Patent
LanguageFrench
Published 16.03.1973
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A beam-leaded electroluminescent diode structure and a method of manufacture are described. The p-n junction is formed such that the junction extends to the top surface of the semiconductor crystal. Proton bombardment of the surface forms insulating regions within the crystal which passivate the p-n junction and permit co-planar or quasiplanar connections through beam lead technology. Metal contacts which are opaque to the proton beam are used for masking during bombardment. These contacts are subsequently built up to form the beam leads.
Bibliography:Application Number: BED791930