HIGHLY INTEGRATED, HIGH SPEED MEMORY WITH BIPOLAR TRANSISTORS
A memory is described comprising static MTL memory cells for high operation speeds. The cell or primary injectors and the bit line injectors are coupled to each other by an angular injection coupling via the low-resistivity base region of the cell flip-flop transistors. This results in a signal path...
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| Main Author | |
|---|---|
| Format | Patent |
| Language | English |
| Published |
09.12.1982
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| Subjects | |
| Online Access | Get full text |
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| Abstract | A memory is described comprising static MTL memory cells for high operation speeds. The cell or primary injectors and the bit line injectors are coupled to each other by an angular injection coupling via the low-resistivity base region of the cell flip-flop transistors. This results in a signal path with reduced series resistance and thus higher signals and a faster read operation obtainable. The density is additionally increased by using in common the primary injectors and the bit line injectors of adjacent cells of the array. |
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| AbstractList | A memory is described comprising static MTL memory cells for high operation speeds. The cell or primary injectors and the bit line injectors are coupled to each other by an angular injection coupling via the low-resistivity base region of the cell flip-flop transistors. This results in a signal path with reduced series resistance and thus higher signals and a faster read operation obtainable. The density is additionally increased by using in common the primary injectors and the bit line injectors of adjacent cells of the array. |
| Author | SIEGFRIED KURT WIEDMANN |
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| Notes | Application Number: AU19820084192 |
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| PublicationCentury | 1900 |
| PublicationDate | 19821209 |
| PublicationDateYYYYMMDD | 1982-12-09 |
| PublicationDate_xml | – month: 12 year: 1982 text: 19821209 day: 09 |
| PublicationDecade | 1980 |
| PublicationYear | 1982 |
| RelatedCompanies | INTERNATIONAL BUSINESS MACHINES CORP |
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| Snippet | A memory is described comprising static MTL memory cells for high operation speeds. The cell or primary injectors and the bit line injectors are coupled to... |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES |
| Title | HIGHLY INTEGRATED, HIGH SPEED MEMORY WITH BIPOLAR TRANSISTORS |
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