HIGHLY INTEGRATED, HIGH SPEED MEMORY WITH BIPOLAR TRANSISTORS

A memory is described comprising static MTL memory cells for high operation speeds. The cell or primary injectors and the bit line injectors are coupled to each other by an angular injection coupling via the low-resistivity base region of the cell flip-flop transistors. This results in a signal path...

Full description

Saved in:
Bibliographic Details
Main Author SIEGFRIED KURT WIEDMANN
Format Patent
LanguageEnglish
Published 09.12.1982
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
Online AccessGet full text

Cover

More Information
Summary:A memory is described comprising static MTL memory cells for high operation speeds. The cell or primary injectors and the bit line injectors are coupled to each other by an angular injection coupling via the low-resistivity base region of the cell flip-flop transistors. This results in a signal path with reduced series resistance and thus higher signals and a faster read operation obtainable. The density is additionally increased by using in common the primary injectors and the bit line injectors of adjacent cells of the array.
Bibliography:Application Number: AU19820084192