HIGH-VOLTAGE SOLID STATE SWITCH

It consists of a polycrystalline semiconductor element (12) holding a monocrystalline semiconductor body (16), whose mass is conductivity of type n and separated from the support element (12) by a dielectric layer (14); from a first lozalized anodic region (18) with conductivity of type p; from a se...

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Bibliographic Details
Main Authors T.J. RILEY, P.W. SHACKLE, A.R. HARTMAN
Format Patent
LanguageEnglish
Published 02.07.1981
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC COMMUNICATION TECHNIQUE
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SELECTING
SEMICONDUCTOR DEVICES
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Summary:It consists of a polycrystalline semiconductor element (12) holding a monocrystalline semiconductor body (16), whose mass is conductivity of type n and separated from the support element (12) by a dielectric layer (14); from a first lozalized anodic region (18) with conductivity of type p; from a second region of localized door (20) with conductivity of type n; from a third localized cathode region (24) with conductivity of type n; from a region (22) with conductivity of the type of a region (22) with conductivity of type p, that surrounding the third region (24) intimately and acting as a protective area. (Machine-translation by Google Translate, not legally binding)
Bibliography:Application Number: AU19800065449