HIGH-VOLTAGE SOLID STATE SWITCH
It consists of a polycrystalline semiconductor element (12) holding a monocrystalline semiconductor body (16), whose mass is conductivity of type n and separated from the support element (12) by a dielectric layer (14); from a first lozalized anodic region (18) with conductivity of type p; from a se...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
02.07.1981
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Subjects | |
Online Access | Get full text |
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Summary: | It consists of a polycrystalline semiconductor element (12) holding a monocrystalline semiconductor body (16), whose mass is conductivity of type n and separated from the support element (12) by a dielectric layer (14); from a first lozalized anodic region (18) with conductivity of type p; from a second region of localized door (20) with conductivity of type n; from a third localized cathode region (24) with conductivity of type n; from a region (22) with conductivity of the type of a region (22) with conductivity of type p, that surrounding the third region (24) intimately and acting as a protective area. (Machine-translation by Google Translate, not legally binding) |
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Bibliography: | Application Number: AU19800065449 |