Image Sensor Structure

A method is disclosed, comprising: etching an array of light guide apertures into a device stack, the device stack disposed over an image layer, the image layer comprising an array of light detectors disposed therein; forming an array of light guides in the light guide apertures, each light guide as...

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Bibliographic Details
Main Authors DEHLINGER, Dietrich, AGAH, Ali, FUNG, Tracy H, CAI, Xiuyu
Format Patent
LanguageEnglish
Published 23.02.2023
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Summary:A method is disclosed, comprising: etching an array of light guide apertures into a device stack, the device stack disposed over an image layer, the image layer comprising an array of light detectors disposed therein; forming an array of light guides in the light guide apertures, each light guide associated with at least one light detector of the array of light detectors; disposing a 1 tpassivation layer over the array of light guides, such that a bottom surface of the 14 passivation layer is in direct contact with a top surface of the light guides; disposing a 14 chemical protection layer over the 1 tpassivation layer, the 1 chemical protection layer and 14 passivation layer comprising at least a portion of a passivation stack; forming an array of nanowells in a top layer of the passivation stack, each nanowell associated with a light guide of the array of light guides; and disposing a crosstalk blocking metal structure within the passivation stack, wherein the crosstalk blocking metal structure reduces crosstalk within the passivation stack.
Bibliography:Application Number: AU20210203485