Magnetic tunnel junction having all-around structure
A magnetic tunnel junction (MTJ) device (200) includes a cylindrically-shaped pillar structure and a first ferromagnetic layer (204) disposed on at least a portion of the pillar structure. The first ferromagnetic layer (204) exhibits a magnetization that is changeable in the presence of at least one...
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Main Authors | , , , |
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Format | Patent |
Language | English |
Published |
26.05.2022
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Subjects | |
Online Access | Get full text |
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Summary: | A magnetic tunnel junction (MTJ) device (200) includes a cylindrically-shaped pillar structure and a first ferromagnetic layer (204) disposed on at least a portion of the pillar structure. The first ferromagnetic layer (204) exhibits a magnetization that is changeable in the presence of at least one of an applied bias and heat. The MTJ device (200) further includes a dielectric barrier (206) disposed on at least a portion of the first ferromagnetic layer (204) and a second ferromagnetic layer (202) disposed on at least a portion of the dielectric barrier (206). The second ferromagnetic layer (202) exhibits a magnetization that is fixed. The MTJ device (200) is configured such that the first and second ferromagnetic layers (202, 204) and the dielectric barrier (206) concentrically surround the pillar structure. |
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Bibliography: | Application Number: AU20200405412 |