Magnetic tunnel junction having all-around structure

A magnetic tunnel junction (MTJ) device (200) includes a cylindrically-shaped pillar structure and a first ferromagnetic layer (204) disposed on at least a portion of the pillar structure. The first ferromagnetic layer (204) exhibits a magnetization that is changeable in the presence of at least one...

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Bibliographic Details
Main Authors SUN, Jonathan, WORLEDGE, Daniel, JABEUR, Kotb, HASHEMI, Pouya
Format Patent
LanguageEnglish
Published 26.05.2022
Subjects
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:A magnetic tunnel junction (MTJ) device (200) includes a cylindrically-shaped pillar structure and a first ferromagnetic layer (204) disposed on at least a portion of the pillar structure. The first ferromagnetic layer (204) exhibits a magnetization that is changeable in the presence of at least one of an applied bias and heat. The MTJ device (200) further includes a dielectric barrier (206) disposed on at least a portion of the first ferromagnetic layer (204) and a second ferromagnetic layer (202) disposed on at least a portion of the dielectric barrier (206). The second ferromagnetic layer (202) exhibits a magnetization that is fixed. The MTJ device (200) is configured such that the first and second ferromagnetic layers (202, 204) and the dielectric barrier (206) concentrically surround the pillar structure.
Bibliography:Application Number: AU20200405412