Calculating corrective read voltage offsets in non-volatile random access memory

• Main Authors: FRY, Aaron, PLETKA, Roman, STOICA, Radu, TOMIC, Sasa, FISHER, Timothy, PAPANDREOU, Nikolaos, IOANNOU, Nikolas, POZIDIS, Charalampos
• Format: Patent
• Language: English
• Published: 16.02.2023
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

A computer-implemented method, according to one approach, is for calibrating read voltages for a block of memory. The computer-implemented method includes: determining a current operating state of a block which includes more than one word-line therein, and where more than one read voltage is associated with each of the word-lines. Moreover, for each of the word-lines in the block: one of the read voltages associated with the given word-line is selected as a reference read voltage, and an absolute shift value is calculated for the reference read voltage. A relative shift value is determined for each of the remaining read voltages associated with the given word-line, where the relative shift values are determined with respect to the reference read voltage. Furthermore, each of the read voltages associated with the given word-line are adjusted using the absolute shift value and each of the respective relative shift values.