Ohmic alloy contact region sealing layer

Forming an ohmic contact sealing layer disposed at an intersection between a sidewall of an ohmic contact and a surface of a semiconductor; forming an ohmic contact sealing layer on the intersection between a sidewall of the ohmic contact and the surface of the semiconductor; and subjecting the semi...

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Bibliographic Details
Main Authors BETTENCOURT, John P, DAVIS, Michael S, DUVAL, Paul J, MCCLYMONDS, James W, BALAS II, Philip C, ALCORN, Paul M
Format Patent
LanguageEnglish
Published 03.02.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Forming an ohmic contact sealing layer disposed at an intersection between a sidewall of an ohmic contact and a surface of a semiconductor; forming an ohmic contact sealing layer on the intersection between a sidewall of the ohmic contact and the surface of the semiconductor; and subjecting the semiconductor with the ohmic contact to a chemical etchant.
Bibliography:Application Number: AU20200364996