CONDUCTIVE SPACERS EXTENDED FLOATING GATES

A method for manufacturing on a substrate a semiconductor device with a floating-gate and a control-gate. The method includes the steps of first forming an isolation zone in the substrate, and thereafter forming the floating gate on the substrate. The method further includes extending the floating g...

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Bibliographic Details
Main Authors JOSEPHUS, F., A., M. GUELEN, ANTONIUS, M., P., J. HENDRIKS, GUIDO, J., M. DORMANS
Format Patent
LanguageEnglish
Published 06.01.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for manufacturing on a substrate a semiconductor device with a floating-gate and a control-gate. The method includes the steps of first forming an isolation zone in the substrate, and thereafter forming the floating gate on the substrate. The method further includes extending the floating gate using spacers, and then forming the control gate over the floating gate and the spacers.
Bibliography:Application Number: AU20030242901