FABRY-PEROT LASER WITH WAVELENGTH CONTROL

A laser device (50), in particular a semiconductor laser, emitting optical radiation with a defined mode pattern can be produced from a standard Fabry-Perot (FP) laser by post-processing at the wafer level, i.e. before the waferis separated into individual dies by cleaving /dicing. A sub-cavity is f...

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Bibliographic Details
Main Authors AUGUSTIN YIPTONG, ADAM, D. COHEN, ROBERT, J. MEARS
Format Patent
LanguageEnglish
Published 19.12.2003
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A laser device (50), in particular a semiconductor laser, emitting optical radiation with a defined mode pattern can be produced from a standard Fabry-Perot (FP) laser by post-processing at the wafer level, i.e. before the waferis separated into individual dies by cleaving /dicing. A sub-cavity is formed within the FP laser cavity (50). The sub-cavity has a predetermined length and is located between the FP facets (12,14). An aperiodic grating composed of a small number of contrast elements (52), typically less than 10, with predetermined inter-element separations and predetermined spacings relative to the sub-cavity is formed on or in the optical waveguide (16). The inter-element separations and the spacings relative to the sub-cavity produce a filtering function of thye aperiodic grating for optical radiation propagating in the waveguide (16). The laser device (50) is suitable for telecommunicatons applications due to its highside -mode-suppression ratio and narrow-linewitdh.
Bibliography:Application Number: AU20030239934