Lateral soi field-effect transistor

• Main Author: RENE P. ZINGG
• Format: Patent
• Language: English
• Published: 12.05.2003
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A thin film lateral SOI device comprises a substrate and a buried oxide layer (4) (BOx) as a dielectric layer on the substrate; a silicon layer (6) on the buried oxide layer, the silicon layer comprising a first thickness silicon region (8), a second thickness silicon region (10) having a thickness smaller than the first thickness silicon region (8) and a third thickness silicon region (12) having a thickness smaller than the second thickness silicon region (10); a dielectric layer (TOx) on top of the silicon layer (6), comprising a gate dielectric layer (18) on top of the first thickness silicon region (8), a field dielectric layer (20) on top of the a second thickness silicon region (10), the field dielectric layer (20) having a thickness larger than the thickness of the gate dielectric layer (18), and a drift dielectric layer (22) on top of the third thickness silicon region (12) the drift dielectric layer (22) having a thickness larger than the thickness of the drift dielectric layer (20); a gate (42) on top of the gate dielectric layer (18) above a channel region (38); a field plate (44) extending across the field dielectric layer (20); a drain (30) laterally spaced to the third thickness silicon region (12) of the silicon layer (6); and a source (32) laterally separated from the gate.