ZUSAMMENSETZUNG ZUR REINIGUNG NACH EINER CHEMISCH-MECHANISCHEN PLANARISIERUNG
A cleaning solution for cleaning microelectronic substrates, particularly for post-CMP or via formation cleaning. The cleaning solution comprises a quaternary ammonium hydroxide, an organic amine, a corrosion inhibitor, and water. A preferred cleaning solution comprises tetramethylammonium hydroxide...
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Main Authors | , , |
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Format | Patent |
Language | German |
Published |
15.04.2010
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Subjects | |
Online Access | Get full text |
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Summary: | A cleaning solution for cleaning microelectronic substrates, particularly for post-CMP or via formation cleaning. The cleaning solution comprises a quaternary ammonium hydroxide, an organic amine, a corrosion inhibitor, and water. A preferred cleaning solution comprises tetramethylammonium hydroxide, monoethylanolamine, ascorbic acid, and water with the alkalinity of the cleaning solution greater than 0.073 milliequivalents base per gram of solution. |
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Bibliography: | Application Number: AT20010942043T |