NICHTFLÜCHTIGE, STATISCHE SPEICHERZELLE
A static memory cell comprising a pair of cross-coupled inverters (10, 12) which is "shadowed" with non-volatile memory elements (14, 16) so that data written in the static memory can be stored in the non-volatile cell, but also can be recalled later. The non-volatile cells (14, 16) are pr...
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Main Authors | , |
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Format | Patent |
Language | German |
Published |
15.08.2008
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Subjects | |
Online Access | Get full text |
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Summary: | A static memory cell comprising a pair of cross-coupled inverters (10, 12) which is "shadowed" with non-volatile memory elements (14, 16) so that data written in the static memory can be stored in the non-volatile cell, but also can be recalled later. The non-volatile cells (14, 16) are programmed with opposite data to increase the robustness of the retrieval process, and they are cross-coupled to the internal nodes (A, B) of the static memory cell, one the non-volatile cells (14) having a control gate connected to B and its source to A, and the other non-volatile element (16) having a control gate connected to A and its source to B. The drain of each non-volatile element (14, 16) is connected by means of a respective pMOS transistor (18, 20) to a program supply means. |
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Bibliography: | Application Number: AT20040736564T |