TRANSPARENTE MIKROPORÖSE MATERIALIEN FÜR CMP

The invention is directed to a chemical-mechanical polishing pad substrate comprising a porous material having an average pore size of about 0.01 microns to about 1 micron. The polishing pad substrate has a light transmittance of about 10% or more at at least one wavelength of about 200 nm to about...

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Bibliographic Details
Main Author PRASAD, ABANESHWAR
Format Patent
LanguageGerman
Published 15.07.2007
Subjects
BASIC ELECTRIC ELEMENTS
DRESSING OR CONDITIONING OF ABRADING SURFACES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
GRINDING
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
PERFORMING OPERATIONS
POLISHING
SEMICONDUCTOR DEVICES
TOOLS FOR GRINDING, BUFFING, OR SHARPENING
TRANSPORTING
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Summary:The invention is directed to a chemical-mechanical polishing pad substrate comprising a porous material having an average pore size of about 0.01 microns to about 1 micron. The polishing pad substrate has a light transmittance of about 10% or more at at least one wavelength of about 200 nm to about 35,000 nm. The invention is further directed to a polishing pad comprising the polishing pad substrate, a method of polishing comprising the use of the polishing pad substrate, and a chemical-mechanical apparatus comprising the polishing pad substrate.
Bibliography:Application Number: AT20030809403T