NICHTFLÜCHTIGER SPEICHERBAUSTEIN

In a non-volatile memory device (10) comprising an electrically polarizable dielectric memory material (11) with ferroelectric or electret properties and capable of exhibiting hysteresis and remanence, wherein the memory material (11) comprises one or more polymers, at least one of these polymers is...

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Bibliographic Details
Main Authors GUDESEN, HANS, GUDE, NORDAL, PER-ERIK
Format Patent
LanguageGerman
Published 15.11.2006
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
GYROSCOPIC INSTRUMENTS
INFORMATION STORAGE
MEASURING
MEASURING DISTANCES, LEVELS OR BEARINGS
NAVIGATION
PHOTOGRAMMETRY OR VIDEOGRAMMETRY
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
SURVEYING
TESTING
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Summary:In a non-volatile memory device (10) comprising an electrically polarizable dielectric memory material (11) with ferroelectric or electret properties and capable of exhibiting hysteresis and remanence, wherein the memory material (11) comprises one or more polymers, at least one of these polymers is a deuterated polymer.
Bibliography:Application Number: AT20020755997T