NICHTFLÜCHTIGER SPEICHERBAUSTEIN
In a non-volatile memory device (10) comprising an electrically polarizable dielectric memory material (11) with ferroelectric or electret properties and capable of exhibiting hysteresis and remanence, wherein the memory material (11) comprises one or more polymers, at least one of these polymers is...
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Main Authors | , |
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Format | Patent |
Language | German |
Published |
15.11.2006
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | In a non-volatile memory device (10) comprising an electrically polarizable dielectric memory material (11) with ferroelectric or electret properties and capable of exhibiting hysteresis and remanence, wherein the memory material (11) comprises one or more polymers, at least one of these polymers is a deuterated polymer. |
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Bibliography: | Application Number: AT20020755997T |