CHEMISCH VERSTÄRKTE POSITIVPHOTORESISTZUSAMMENSETZUNG

Disclosed is a chemical amplification positive amplification which can be formed into resist patterns much improved in transparency, photosensitivity and resolution and is suitable to KrF and ArF excimer lasers, enabling a submicrolithography process to be as exquisite as 0.2 mu m or less. This comp...

Full description

Saved in:
Bibliographic Details
Main Authors KIM, SEONG-JU, PARK, JOO-HYEON, PARK, SUN-YI, SEO, DONGUL
Format Patent
LanguageGerman
Published 15.09.2005
Edition7
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CINEMATOGRAPHY
COMPOSITIONS BASED THEREON
COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS
MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
MATERIALS THEREFOR
METALLURGY
ORGANIC MACROMOLECULAR COMPOUNDS
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
THEIR PREPARATION OR CHEMICAL WORKING-UP
USE OF INORGANIC OR NON-MACROMOLECULAR ORGANIC SUBSTANCES ASCOMPOUNDING INGREDIENTS
Online AccessGet full text

Cover

More Information
Summary:Disclosed is a chemical amplification positive amplification which can be formed into resist patterns much improved in transparency, photosensitivity and resolution and is suitable to KrF and ArF excimer lasers, enabling a submicrolithography process to be as exquisite as 0.2 mu m or less. This composition is based on a copolymer of the formula I, ranging, in polystyrene-reduced weight average molecular weight, from 3,000 to 50,000 with a molecular weight distribution (Mw/Mn) of 1.0 to 2.0, and a low molecular weight compound of the formula VI:
Bibliography:Application Number: AT19990307323T