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The invention concerns a source supplying an adjustable energy electron beam, comprising a plasma chamber (P) consisting of an enclosure (1) having an inner surface of a first value (S1) and an extraction gate (2) having a surface of a second value (S2), the gate potential being different from that...

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Bibliographic Details
Main Authors PELLETIER, JACQUES, ARNAL, YVES, ALBAN-MARIE, LACOSTE, ANA
Format Patent
LanguageGerman
Published 15.06.2005
Edition7
Subjects
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Summary:The invention concerns a source supplying an adjustable energy electron beam, comprising a plasma chamber (P) consisting of an enclosure (1) having an inner surface of a first value (S1) and an extraction gate (2) having a surface of a second value (S2), the gate potential being different from that of the enclosure and adjustable. The invention is characterized in that the plasma is excited and confined in multipolar or multidipolar magnetic structures, the ratio of the second value (S2) over the first value (S1) being close to: D=1/ √2 me/mi exp (−½), wherein: is the proportion of electrons of the plasma P, me the electron mass, and mi is the mass of positively charged ions.
Bibliography:Application Number: AT20020796900T