DIFFUNDIERUNG MIT FELDVERSTÄRKUNG UND OPTISCHER AKTIVIERUNG

A method of making a semiconductor material using a modified forced diffusion method includes the steps of placing the semiconductor material on a substrate in a vacuum vessel, locating an impurity atop the semiconductor material, creating a high voltage potential across the semiconductor material,...

Full description

Saved in:
Bibliographic Details
Main Authors PRELAS, MARK, A, SUNG, TALM, POPOVICI, GALINA, KHASAWINAH, S
Format Patent
LanguageGerman
Published 15.06.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A method of making a semiconductor material using a modified forced diffusion method includes the steps of placing the semiconductor material on a substrate in a vacuum vessel, locating an impurity atop the semiconductor material, creating a high voltage potential across the semiconductor material, heating the semiconductor material and bombarding the semiconductor material with photons under the effects of the high voltage and heat previously created. The process is particularly applicable to creating N-type diamond semiconductor material.
Bibliography:Application Number: AT19950935183T