VERFAHREN ZUR HERSTELLUNG ENDOHEDRALER FULLERENE ODER FULLERENDERIVATE

• Main Authors: HERTEL, INGOLF, CAMPBELL, ELEANOR, TELLGMANN, RALF
• Format: Patent
• Language: German
• Published: 15.11.1999
• Edition: 6
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

Amounts of endohedral fullerenes or fullerene derivatives which can be isolated macroscopically are to be prepared efficiently irrespective of the type of doping agent to be implanted. To that end, according to the invention, fullerenes or fullerene derivatives are applied to a target and irradiated in the solid phase with low-energy ions having kinetic energy of between 5 eV and 500 eV of the doping agents to be implanted. The application of fullerenes or fullerene derivatives and irradiation are carried out simultaneously or successively. The energy of the ions and the irradiation dose at which most of the ions of the doping agents to be implanted penetrate the fullerene or fullerene derivatives to be applied to the target are determined in series of measurements.