Synthesis of SrSnO 3 thin films by pulsed laser deposition: Influence of substrate and deposition temperature

SrSnO 3 thin films were prepared by pulsed laser deposition on amorphous silica and single crystal substrates of R-sapphire, (100)LaAlO 3 and (100)SrTiO 3. High quality epitaxial (100) oriented films were obtained on LaAlO 3 and SrTiO 3 while a texture was revealed for films on sapphire deposited at...

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Bibliographic Details
Published inThin solid films Vol. 519; no. 2; pp. 614 - 618
Main Authors Alves, M.C.F., Boursicot, S., Ollivier, S., Bouquet, V., Députier, S., Perrin, A., Weber, I.T., Souza, A.G., Santos, I.M.G., Guilloux-Viry, M.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 2010
Subjects
Epitaxial growth
Perovskite
Pulsed laser deposition
Stannate
Thin films
Thin films
Perovskite
Pulsed laser deposition
Epitaxial growth
Stannate
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Summary:SrSnO 3 thin films were prepared by pulsed laser deposition on amorphous silica and single crystal substrates of R-sapphire, (100)LaAlO 3 and (100)SrTiO 3. High quality epitaxial (100) oriented films were obtained on LaAlO 3 and SrTiO 3 while a texture was revealed for films on sapphire deposited at the same deposition temperature of 700 °C. Amorphous films were obtained on silica but a post annealing at 800 °C induced crystallization with a random orientation. The screening of deposition temperature showed epitaxial features on SrTiO 3 from 650 °C while no crystallization was observed at 600 °C. The influence of substrate and deposition temperature was confirmed by Scanning Electron Microscopy and Atomic Force Microscopy observations.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2010.07.092