In situ X-ray photoelectron spectroscopy studies of HfO 2 gate dielectric on SiC

HfO 2 film was successfully grown on the 4H–SiC surface by using pulsed laser deposition system. The thermal stability and band offsets at the interfaces of HfO 2/SiC and the effect of nitrogen on the electronic structures and thermal stability of HfO 2 film have been investigated by using X-ray pho...

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Bibliographic Details
Published inThin solid films Vol. 518; no. 24; pp. e31 - e33
Main Authors Chen, Q., Feng, Y.P., Chai, J.W., Zhang, Z., Pan, J.S., Wang, S.J.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 2010
Subjects
Annealing
High- k
Nitrogen incorporation
SiC
Wide band-gap semiconductor
Annealing
Nitrogen incorporation
Wide band-gap semiconductor
SiC
High- k
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Summary:HfO 2 film was successfully grown on the 4H–SiC surface by using pulsed laser deposition system. The thermal stability and band offsets at the interfaces of HfO 2/SiC and the effect of nitrogen on the electronic structures and thermal stability of HfO 2 film have been investigated by using X-ray photoemission spectroscopy (XPS). Nitridation of HfO 2 leads to reduction of the band gap and band offsets, but the atomic nitrogen can passivate oxygen vacancies in the dielectrics during nitridation process and improve interface thermal stability. Post nitridation annealing is required to increase the band gap and band offsets of dielectric film.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2010.03.116