Sulphurization of single-phase Cu 11In 9 precursors for CuInS 2 solar cells
Using Rutherford backscattering (RBS), X-ray diffraction (XRD), and scanning electron microscopy (SEM), the sulphurization of single-phase Cu 11In 9 precursors to be employed as light absorbing CuInS 2 (CIS) layers in CIS–CdS heterojunction thin-film solar cells has been investigated. The Cu 11In 9...
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Published in | Thin solid films Vol. 515; no. 15; pp. 5921 - 5924 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
2007
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Subjects | |
Online Access | Get full text |
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Summary: | Using Rutherford backscattering (RBS), X-ray diffraction (XRD), and scanning electron microscopy (SEM), the sulphurization of single-phase Cu
11In
9 precursors to be employed as light absorbing CuInS
2 (CIS) layers in CIS–CdS heterojunction thin-film solar cells has been investigated. The Cu
11In
9 precursor films were produced by DC-sputtering from a single-phase Cu
11In
9 target. The sulphurization at 500 or 300 °C was performed by adding different amounts of elemental sulphur with heating rate and sulphurization time as additional parameters. During sulphurization at 500 °C, up to 50% of the indium initially present in the precursor is lost. We relate the In-loss to the volatile In
2S compound, the formation of which is favoured by the phase transition of Cu
11In
9 to Cu
16In
9 at 307 °C. Consequently, the In-loss can be suppressed by employing a sulphurization temperature of 300 °C. At this temperature, a prolonged sulphurization time and a large sulphur excess are necessary in order to obtain stoichiometric CIS beneath a CuS
x
surface phase. |
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ISSN: | 0040-6090 1879-2731 |
DOI: | 10.1016/j.tsf.2006.12.053 |