Molecular dynamics simulation analyses on injection angle dependence of SiO 2 sputtering yields by fluorocarbon beams

Angular dependence of sputtering yields of SiO 2 substrates subject to CF 3 beam injections is evaluated with the use of molecular dynamics simulations. The obtained sputtering yield data are in reasonable agreement with experimental observations. Atomic compositions in the SiO 2-CF mixing layer as...

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Bibliographic Details
Published inThin solid films Vol. 515; no. 12; pp. 4883 - 4886
Main Authors Kawase, Tomohito, Hamaguchi, Satoshi
Format Journal Article
LanguageEnglish
Published Elsevier B.V 2007
Subjects
Fluorocarbon
Molecular dynamics simulations
Plasma etching
Plasma surface interaction
Plasma etching
Molecular dynamics simulations
Fluorocarbon
Plasma surface interaction
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Summary:Angular dependence of sputtering yields of SiO 2 substrates subject to CF 3 beam injections is evaluated with the use of molecular dynamics simulations. The obtained sputtering yield data are in reasonable agreement with experimental observations. Atomic compositions in the SiO 2-CF mixing layer as well as kinetic energies and atomic compositions of sputtered species also exhibit strong dependence of the injection angle.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2006.10.024